Ferroelectric radiation-hardened serial interface RAM (F-RAM) for space applications introduced by Infineon

MUNICH- Infineon Technologies LLC in Munich introduces ferroelectric Radiation Hardened Serial Interface RAM (F-RAM) for use in extreme environments in space applications.

The devices are more power efficient than non-volatile EEPROMs and serial NOR Flash devices for space applications. It supports the industry standard SPI (Serial Peripheral Interface) protocol.

QML-V qualified F-RAM provides non-volatile flash-write technology and 100+ year data retention for space applications.

The device can replace serial NOR flash and EEPROMs, and is intended for critical data logging, telemetry storage, command and control calibration data storage, and code storage solutions for boot for microcontrollers, FPGAs and ASICs.

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2 Megabit density F-RAM with SPI provides 10 trillion read/write cycles and 120 years of data retention at 85 degrees Celsius, in an operating voltage range of 2 to 3.6 volts. The lowest operating current is 10 milliamps maximum, with an extremely low programming voltage of 2 volts.

Radiation-hardened F-RAMs are also suitable for avionics and other applications that require military-grade temperature levels ranging from -55 to 125 C.

Additional features include a small footprint with a 16-pin ceramic SOP package. DLAM QML-V qualified devices have radiation performance of more than 150 kilorads of total radiation dose; single-event lockout greater than 114 MeV cm 2/mg at 115 C; are immune to occasional upheavals; and have a single event functional interrupt (SEFI) of less than 1.34 * 10-4 err/dev.day.

More information is online at www.infineon.com.